(2010) High-temperature performance of silicon junctionless MOSFETs. (2010) Reduced electric field in junctionless transistors, Appl.Phys. (2009) Junctionless multigate field-effect transistor. Proceeding of 31th European Solid State Device Research Conference 5 (69)Īfzalian A., Akhavan N.D. (2013) Subthreshold behavior models for nanoscale short-channel junctionless cylindrical surrounding-gate MOSFETs. (2011) Vertically stacked and independently controlled twin-gate MOSFETs on a single si nanowire. Li X., Chen Z., Shen N., Sarkar D., Singh N., Banerjee K., Lo G.
(2011) Dual-vth independent-gate finfets for low power logic circuits. (2010) Analytical modeling of a nanogap-embedded fet for application as a biosensor. (2008) Novel dielectric modulated field-effect transistor for label-free dna detection. Kim C.-H., Jung C., Park H.G., Choi Y.-K. (2009) Nanogap field-effect transistor biosensors for electrical detection of avian influenza, Small (Weinheim an der Bergstrasse, Germany.) 21 Gu B., Park T.J., Ahn J.-H., Huang X.-J., Lee S.Y., Choi Y.-K. (2007) A dielectric-modulated field-effect transistor for biosensing. We have reported that DMDG-JL-MOSFET exhibits significant increase in sensitivity when compared to other contemporary JL-MOSFET based biosensors, thus making the proposed device an attractive solution for biosensing applications.īergveld P (1986) The development and application of fet-based biosensors. Further, the effectiveness of the proposed DMDG-JL-MOSFET based biosensor is confirmed by benchmarking the sensitivity metric with contemporary architectures of JL-MOSFET based biosensor. It has been observed that at a cavity length ( L c a v) of 25 nm, T i O 2 shows 87%, 68% and 52% higher sensitivity than if S i O 2 is taken as gate dielectric in case of neutral, positively charged and negatively charged biomolecules respectively. The variation in threshold voltage ( V t h), drain current ( I d) and I O N/ I O F F ratio has been used as the sensing metric to estimate the sensitivity of the proposed biosensor. The model has been validated with data obtained from Sentaurus TCAD simulator. In this work, a 2 − D analytical model of Dielectrically Modulated, Dual Material, Double Gate Junctionless MOSFET (DMDG-JL-MOSFET) based label free biosensor has been proposed to investigate the effect of high- κ gate dielectric materials ( T i O 2, H f O 2, and A l 2 O 3) and cavity length variation on the sensitivity of the biosensor.
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